Discrete silicon carbide devices and half-bridge power modules — engineered for high-voltage, high-efficiency conversion. Available through Digikey.
Built on premium SiC epitaxial wafers with a proprietary, exceptionally stable gate oxide, precision-engineered doping profiles and advanced edge termination — for ultra-low RDS(on) with full voltage ruggedness. The technologies we offer:
SiC Schottky diodes for ultra-fast switching and low forward voltage drop — available as chip-level bare die for custom integration.
1200V & 3300V SiC MOSFETs in discrete and module form.
SiC JFET devices for normally-off operation at extreme temperatures (300°C+) — suited for aerospace, defense, and high-reliability industrial applications.
| Device / Voltage | Current | RDS(ON) | Package | Part Number |
|---|---|---|---|---|
| 1200V MOSFET | 33A | 60mΩ | Chip level | C060SCM12033A |
| 1200V MOSFET | 80A | 20mΩ | Chip level | C020SCM12080A |
| 1200V MOSFET | 33A | 60mΩ | TO-247-3 / TMAX | C060SCM12033B |
| 1200V MOSFET | 80A | 20mΩ | TO-247-3 / TMAX | C020SCM12080B |
| 1200V MOSFET | 33A | 60mΩ | TO-247-4 | C060SCM12033B1 |
| 1200V MOSFET | 20A | 80mΩ | TO-247-4 | C080SCM12020B1 |
| 3300V MOSFET | 70A | 80mΩ | Chip level | C080SCM33070A |
| 3300V MOSFET | 70A | 80mΩ | TO-247-4 | C080SCM33070B1 |
// Click a part number to open its datasheet on Digikey.
Half-bridge SiC power modules for high-current conversion — designed for motor drives, renewable energy inverters, data center UPS, and industrial power conversion applications.
| Module / Voltage | Current | Package | Part Number |
|---|---|---|---|
| 1200V Half-Bridge | 160A | SOT227 | C020SCM120C160D |
| 3300V Half-Bridge | — | — | To be published |
UNGATED
Datasheets for our main legacy products open directly on Digikey — no form required.
GATED
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