Custom manufacturing and production services across our Silicon Carbide and III-V compound-semiconductor fabs — with wafer and packaging process services to support both R&D and production demands.
Cactus Materials runs two semiconductor fabs totaling 40,000 sq ft in Tempe, Arizona — a Silicon Carbide (SiC) fab for high-power devices and a III-V compound-semiconductor fab for AI photonics. We bring extensive fab experience across many markets, and provide wafer and packaging process services to support R&D and production.
Precision epitaxial growth for III-V compound-semiconductor devices.
Wafer size up to 200 mm
SiC device fabrication for high-voltage, high-temperature power applications.
Wafer size up to 150 mm
Precision engineering for specialized, application-specific devices.
Scalable, high-volume manufacturing on mature platforms.
Epitaxial growth and wafer processing for R&D and production.
Advanced packaging solutions — including wafer bonding, chip-level bare die, TO247, SOT227, and custom packaging — with partner support from prototype to production.
Photonics, Power, and Custom Epi capabilities across GaAs, eGaAs, InP, and SiC platforms - from 650V to 3300V, 850nm to 1700nm.