Cactus Materials’ Photonics Division develops and manufactures advanced optoelectronic semiconductor devices for high-speed optical communications, sensing, aerospace, defense, and industrial photonics — built on proprietary eGaAs™ dilute-nitride technology.
Our Photonics Division builds on proprietary eGaAs™ (Engineered Gallium Arsenide) dilute-nitride technology to extend mature GaAs manufacturing into the wavelength ranges traditionally served by more expensive indium-phosphide (InP).
For decades InP has powered the 1310 nm and 1550 nm windows of modern fiber optics — at higher cost, lower volume and a more complex supply chain. Dilute-nitride lets GaAs reach those wavelengths while keeping the cost, maturity and scalability of established GaAs fabrication.
The eGaAs™ platform combines advanced materials engineering with precision epitaxial growth to create highly engineered semiconductor structures whose bandgap can be precisely tailored for specific applications. Quantum efficiency measurements demonstrate exceptional bandgap tunability across a broad wavelength range — allowing us to optimize device performance across 850 nm to 1600 nm while maintaining excellent optical efficiency and reliability.
Engineered dilute-nitride extends GaAs into InP wavelengths — with cost and manufacturing advantages.
From epitaxial wafer growth through device fab, test and packaging support — full quality and supply-chain control.
Application-specific devices optimized for low Relative Intensity Noise (RIN), enhanced temperature stability, customized wavelength performance, and demanding military or aerospace specifications.
Mature GaAs platform enables scalable, cost-effective production with room for specialized devices.
We work with customers, research institutions, packaging partners and system integrators to reach production.
AI, cloud computing, hyperscale data centers, advanced sensing and secure communications are driving unprecedented demand for optical components that combine speed, reliability, manufacturability and affordability.
By enabling high performance in the 1310 nm and 1550 nm bands on a mature GaAs platform, Cactus offers a compelling alternative to InP — lower manufacturing cost, higher production scalability, vertically integrated domestic manufacturing, and exceptional device performance.