Power // Silicon Carbide
Engineering SiC power devices for high-power applications
Cactus Materials Power Division designs and manufactures high-performance silicon carbide (SiC) power semiconductors for the next generation of critical power infrastructure — enabling higher operating voltages, greater power density, superior thermal performance, and smaller system footprints for the world’s most demanding power conversion applications.
01 — Our SiC technology
Premium SiC, engineered for reliability
Our devices are fabricated on premium SiC epitaxial wafers using proprietary thermal processing that produces an exceptionally stable gate oxide — delivering outstanding long-term reliability under demanding high-voltage, high-frequency switching.
Combined with precision-engineered doping profiles and advanced edge-termination technology, our devices achieve ultra-low on-resistance (RDS(on)) without compromising voltage ruggedness — enabling higher voltages, greater power density, superior thermal performance and smaller system footprints.
02 — How we differentiate
More than a semiconductor supplier
Application Focus
We specialize in high-power, high-voltage SiC solutions for mission-critical infrastructure.
Customized Devices
We tailor devices and modules to your specific electrical, thermal and packaging requirements.
System-Level Expertise
We develop and validate reference designs — devices, gate drivers, thermal, packaging and control — into application-ready building blocks.
World-Class Ecosystem
We collaborate with leading research institutions and advanced-packaging partners — premium SiC with the agility of a focused company.
03 — Explore Power
Products, applications & design support
SiC Products
Discrete SiC MOSFETs (1200V / 3300V, TO-247) and half-bridge power modules (SOT227). Available on Digikey.
Applications
Power Infrastructure (grid, data centers, microgrids) and Aerospace & Defense.