Power Devices (SiC)

• Planar 1.2kV, 1.7kV, 3.3 kV Standard (300C)
• Planar 1.2kV, 1.7kV, 3.3 kV Extreme (500C+)
• Radiation Hardening Up to 900V

MOSFET with body diode I 40A – 3300V SiC 80mΩ 4L

MOSFET with body diode I 40A – 3300V SiC 80mΩ Bare Die

MOSFET with body diode I 33A – 1200V SiC 60mΩ 4L

• Single Optical UV 200 – 400nm,
• Array Optical UV 200 – 400nm